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NCEP40T20AGU - N-Channel Super Trench Power MOSFET

Datasheet Summary

Description

frequency switching performance.

combination of RDS(ON) and Qg.

Features

  • VDS =40V,ID =200A RDS(ON)=0.95mΩ , typical @ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating 100% UIS TESTED! 100% ΔVds TESTED! DFN 5X6 Top View Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package P40T20AGU NCEP40T20AGU DFN5X6-8L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwis.

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Datasheet Details

Part number NCEP40T20AGU
Manufacturer NCE Power Semiconductor
File Size 732.58 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEP40T20AGU Datasheet
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http://www.ncepower.com Pb Free Product NCEP40T20AGU NCE N-Channel Super Trench Power MOSFET Description The NCEP40T20AGU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ●Ideal for high-frequency switching and synchronous rectification General Features ● VDS =40V,ID =200A RDS(ON)=0.
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