NCE Power NCE5530K
The NCE5530K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.| Part No. | NCE5530K |
|---|---|
| Datasheet | NCE5530K Download |
| Manufacturer |  NCE Power |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications.GENERAL FEATURES
● VDS =-55V,ID =-30A RDS(ON) <40mΩ @ VGS=-10V● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation Schematic diagram Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply 100% UIS TESTED! Marking and pin Assignment TO-252-2L top view Package Marking And Ordering Information Device Marking Device Device Package NCE5530K NCE5530K TO-252-2L Reel Size - Tape width - Quantity -
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor ID (100℃) IDM PD Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperatur...
