NCE Power NCE6008AS
The NCE6008AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.| Part No. | NCE6008AS |
|---|---|
| Datasheet | NCE6008AS Download |
| Manufacturer |  NCE Power |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications.GENERAL FEATURES
● VDS = 60V,ID =8A RDS(ON) < 20mΩ @ VGS=10V (Typ:15.6mΩ) RDS(ON) < 28mΩ @ VGS=4.5V (Typ:20mΩ)● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Low gate to drain charge to reduce switching losses Schematic diagram Application
● Power switching application
● Load switch Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package NCE6008AS NCE6008AS SOP-8 Reel Size - Tape width - Quantity -
ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit 60 ±20 8 5.6 32 2.1 -55 To 150 Unit V V A A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Amb...
