NCE Power NCE60H21
The NCE60H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.| Part No. | NCE60H21 |
|---|---|
| Datasheet | NCE60H21 Download |
| Manufacturer |  NCE Power |
| Description | NCE N-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications.GENERAL FEATURES
● VDS =60V ,ID =210A RDS(ON) < 4mΩ @ VGS=10V Schematic diagram● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply Marking and pin Assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-220 top view Package Marking And Ordering Information Device Marking Device Device Package NCE60H21 NCE60H21 TO-220 Reel Size - Tape width - Quantity -
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor ID (100℃) IDM PD Single pulse ava...
