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NCE7080 - NCE N-Channel Enhancement Mode Power MOSFET

General Description

The NCE7080 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =70V,ID =80A RDS(ON) < 8mΩ @ VGS=10V (Typ:6.3mΩ) Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Datasheet Details

Part number NCE7080
Manufacturer NCE Power
File Size 441.08 KB
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE7080 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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http://www.ncepower.com Pb Free Product NCE7080 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE7080 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =70V,ID =80A RDS(ON) < 8mΩ @ VGS=10V (Typ:6.