NCE75ED120BT
Description
Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation;
Features
- Trench Field Stop Gen.7 Technology Offering
- Low saturation voltage: VCEsat = 1.65V(Typ.) @ IC = 75 A
- High speed switching，low switching losses
- Maximum junction temperature Tvjmax = 175°C
- Tighten parameter distribution
- High ruggedness, temperature stable behavior
- Pb-free lead plating; Ro HS pliant
Application
- PV power
- Three-level Solar String Inverter
- UPS
Package Marking and Ordering Information
Device
Device Package
TO-247-3L
Device Marking NCE75ED120BT
Schematic diagram
Absolute Maximum Ratings (TC=25°C unless otherwise noted)
Symbol
Parameter
Value
VCES
Collector-Emitter Voltage
VGES
Gate- Emitter Voltage
±30
Collector Current
Collector Current @TC = 100 °C
ICpuls
Pulsed...
