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NCE8098 - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE8098 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =80V,ID =98A RDS(ON) < 7.5mΩ @ VGS=10V (Typ:6mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Schematic diagram.

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Datasheet Details

Part number NCE8098
Manufacturer NCE Power
File Size 321.19 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE8098 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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http://www.ncepower.com Pb Free Product NCE8098 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE8098 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =80V,ID =98A RDS(ON) < 7.