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NCE3401 - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -30V,ID = -4.2A RDS(ON) < 70mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Schematic diagram Marking and pin Assignment.

📥 Download Datasheet

Datasheet Details

Part number NCE3401
Manufacturer NCEPOWER
File Size 275.00 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE3401 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Pb Free Product http://www.ncepower.com NCE3401 NCE P-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S G D GENERAL FEATURES ● VDS = -30V,ID = -4.2A RDS(ON) < 70mΩ @ VGS=-4.