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2SK3575 - Switching N-Channel MOSFET

General Description

The 2SK3575 is N-channel MOS FET device that

Key Features

  • a low on-state resistance and excellent switching characteristics, designed for low voltage high current.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3575 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3575 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. 5 ORDERING INFORMATION PART NUMBER 2SK3575 2SK3575-S 2SK3575-ZK 2SK3575-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote FEATURES •4.5V drive available •Low on-state resistance RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 42 A) •Low gate charge QG = 70 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 83 A) •Avalanche capability ratings •Surface mount device available Note TO-220SMD package is produced only in Japan.