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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3570
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The 2SK3570 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES •4.5V drive available. •Low on-state resistance, RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 24 A) •Low gate charge QG = 23 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A) •Built-in gate protection diode •Surface mount device available
5 ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3570
TO-220AB
2SK3570-S
TO-262
2SK3570-ZK 2SK3570-Z
TO-263 Note
TO-220SMD
Note TO-220SMD package is produced only in Japan.
K3570 Datasheet
