K3570
K3570 is 2SK3570 manufactured by NEC.
DESCRIPTION
The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
- 4.5V drive available.
- Low on-state resistance, RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 24 A)
- Low gate charge QG = 23 n C TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A)
- Built-in gate protection diode
- Surface mount device available
5 ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3570
TO-220AB
2SK3570-S
TO-262
2SK3570-ZK 2SK3570-Z
TO-263 Note
TO-220SMD
Note TO-220SMD package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V)
VDSS VGSS
±20
Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note
ID(DC)
±48
ID(pulse)
±160
Total Power Dissipation (TA = 25°C)
PT1
Total Power Dissipation (TC = 25°C)
PT2
Channel Temperature
Tch...
