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NE500100 - C-Band Medium Power GaAs MESFET

General Description

The NE8500199 is a medium power GaAs MESFET designed for up to a 1W output stage or as a driver for higher power devices.

The device has no internal matching and can be used at frequencies from UHF to 8.5 GHZ.

The device is available in the “99” package or in chip form.

Key Features

  • HIGH OUTPUT POWER: 1 W.
  • HIGH LINEAR GAIN: 9.0 dB.
  • HIGH.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
NE500199 C-Band Medium Power GaAs MESFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 FEATURES • HIGH OUTPUT POWER: 1 W • HIGH LINEAR GAIN: 9.0 dB • HIGH EFFICIENCY: 37% (PAE) • INDUSTRY STANDARD PACKAGING • THIS DEVICE IS ALSO AVAILABLE AS A TWO-CELL CHIP: NE8500100 ABSOLUTE MAXIMUM RATINGS1 (TC = 25 °C unless otherwise noted) SYMBOLS VDS VGD VGS IDS IGS PT TCH TSTG PARAMETERS Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature UNITS V V V RATINGS 15 -18 -12 IDSS 6.0 6.0 175 -65 to +175 Total Power Dissipation DESCRIPTION The NE8500199 is a medium power GaAs MESFET designed for up to a 1W output stage or as a driver for higher power devices. The device has no internal matching and can be used at frequencies from UHF to 8.5 GHZ.