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NP80N055 - Switching N-Channel Power MOS FET

General Description

applications.

Key Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on)1 = 11 m Ω MAX. (VGS = 10 V, I D = 40 A) RDS(on)2 = 13 m Ω MAX. (VGS = 5 V, I D = 40 A).
  • Low Ciss : Ciss = 2900 pF TYP.
  • Built-in gate protection diode NP80N055ELE (TO-220AB).

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📁 Similar Datasheet

Part Number Description Manufacturer
NP80N055CHE Switching N-Channel Power MOSFET NEC
NP80N055DHE Switching N-Channel Power MOSFET NEC
NP80N055EHE Switching N-Channel Power MOSFET NEC
NP80N055KHE Switching N-Channel Power MOSFET NEC
NP80N055KLE N-CHANNEL POWER MOS FET NEC

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
NP80N055CLE Switching N-Channel Power MOSFET
NP80N055DLE Switching N-Channel Power MOSFET
NP80N055ELE Switching N-Channel Power MOSFET
NP84N04 MOS Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CLE, NP80N055DLE, NP80N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION These products are N-channel MOS Field Effect www.DataSheet4U.com Transistor designed for high current switching ORDERING INFORMATION PART NUMBER NP80N055CLE NP80N055DLE PACKAGE TO-220AB TO-262 TO-263 applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 m Ω MAX. (VGS = 10 V, I D = 40 A) RDS(on)2 = 13 m Ω MAX. (VGS = 5 V, I D = 40 A) • Low Ciss : Ciss = 2900 pF TYP.