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UPA880TS - NPN SIGs RF Twin Transistor

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • 2 different built-in transistors (NESG2046M33, NESG2107M33) Q1: High gain SiGe transistor fT = 18 GHz TYP. , S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz Q2: Low phase distortion SiGe transistor suited for OSC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET NPN SiGe RF TWIN TRANSISTOR µPA880TS NPN SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, NESG2107M33) Q1: High gain SiGe transistor fT = 18 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz Q2: Low phase distortion SiGe transistor suited for OSC applications fT = 10 GHz TYP., S21e2 = 9 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • 6-pin super lead-less minimold (1007 package) BUILT-IN TRANSISTORS Q1 3-pin super lead-less minimold part No.