UPA880TS Datasheet | NEC

FEATURES - 2 different built-in transistors (NESG2046M33, NESG2107M33) Q1: High gain Si Ge transistor f T = 18 GHz TYP., S21e2 = 13 d B TYP. @ VCE = 1 V, IC = 15 m A, f = 2 GHz Q2: Low phase distortion Si Ge transistor suited for OSC applications f T = 10 GHz TYP., S21e2 = 9 d B TYP. @ VCE = 1 V, IC = 5 m A, f = 2 GHz - 6-pin super lead-less minimold (1007 package) BUILT-IN TRANSISTORS Q1 3-pin super lead-less minimold part No. NESG2046M33 Q2 NESG2107M33 ORDERING INFORMATION Part Number Quantity 50 pcs (Non reel) 10 kpcs/reel - 8 mm wide embossed taping - Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape Supplying Form µPA880TS µPA880TS-T3 Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm...