NEC 2K2139
The 2SK2139 is N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications.DESCRIPTION
PACKAGE DIMENSIONS (in millimeters) 10.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2FEATURES
● Low On-Resistance 15.0±0.3 RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A)● Low Ciss Ciss = 930 pF TYP.
● High Avalanche Capability Ratings
● Isolate TO-220 (MP-45F) Package
ABSOLUTE MAXIMUM RATINGS
(TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 600 ± 30 ± 5.0 ± 20 35 2.0 150 5.0 8.3 V V A A W W ˚C 3±0.1 4±0.2 0.7±0.1 2.54 1.3±0.2 1.5±0.2 2.54 13.5MIN. 12.0±0.2 2.5±0.1 0.65±0.1 1. Gate 2. Drain 3. Source –55 to +150 ˚C A mJ 1 2 3 MP-45F (ISOLATED TO-220) Drain ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 Body Diode Gate Source Document No. TC-2512 (O. D. No. TC-8071) Date Published January 1...