NEC 2SA1222
PNP SILICON EPITAXIAL TRANSISTOR
| Part No. | 2SA1222 |
|---|---|
| Datasheet | 2SA1222 Download |
| Manufacturer |  NEC |
| Description | PNP SILICON EPITAXIAL TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● Ideal for use of high withstanding voltage current such as TV vertical deflection output, audio output, and variable power supplies.● Complementary transistor with 2SC2958 and 2SC2959 VCEO = 140 V: 2SA1221/2SC2958 VCEO = 160 V: 2SA1222/2SC2959 PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* PT Tj Tstg Ratings −160 −140/–160 −5.0 −500 −1.0 1.0 150 −55 to +150 Unit V V V mA A W °C °C * PW ≤ 10 ms, duty cycle ≤ 50%ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Parameter Collector cutoff current Emitter cutoff current DC current gain DC base voltage Collector saturation voltage Base saturation voltage Output capacitance Gain bandwidth product Symbol ICBO IEBO hFE ** VBE ** VCE(sat) ** VBE(sat) ** Cob fT Conditions VCB = −100 V, IE...
