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2SA1615-Z - PNP Silicon Transistor

Download the 2SA1615-Z datasheet PDF. This datasheet also covers the 2SA1615 variant, as both devices belong to the same pnp silicon transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • Large current capacity: IC(DC):.
  • 10 A, IC(pulse):.
  • 15 A.
  • High hFE and low collector saturation voltage: hFE = 200 MIN. (@VCE =.
  • 2.0 V, IC =.
  • 0.5 A) VCE(sat) ≤.
  • 0.25 V (@IC =.
  • 4.0 A, IB =.
  • 0.05 A).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SA1615_NEC.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SA1615-Z PNP Transistor Stanson Technology
2SA1615-Z Transistor Kexin
2SA1615-Z Silicon PNP Power Transistor Inchange Semiconductor
2SA1615 PNP Transistor Stanson Technology
2SA1615 Silicon PNP Power Transistor Inchange Semiconductor

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SA1615 PNP Silicon Transistor
2SA1610 HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR
2SA1611 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR
2SA1612 AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR
2SA1608 PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET SILICON POWER TRANSISTORS 2SA1615, 1615-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES • Large current capacity: IC(DC): −10 A, IC(pulse): −15 A • High hFE and low collector saturation voltage: hFE = 200 MIN. (@VCE = −2.0 V, IC = −0.5 A) VCE(sat) ≤ −0.25 V (@IC = −4.0 A, IB = −0.05 A) QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC www.DataSheet4U.com Corporation to know the specification of quality grade on the devices and its recommended applications.