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2SA1650 - PNP SILICON EPITAXIAL TRANSISTOR

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • a very low collector-to-emitter saturation. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SA1608 PNP Transistor
2SA1610 HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR
2SA1611 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR
2SA1612 AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR
2SA1615 PNP Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON POWER TRANSISTOR 2SA1650 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1650 is a mold power transistor developed for highspeed switching and features a very low collector-to-emitter saturation. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching. PACKAGE DRAWING (UNIT: mm) FEATURES • Mold package that does not require an insulating board or insulation bushing • Fast switching speed • Low collector-to-emitter saturation voltage: VCE(sat) ≤ −0.3 V (MAX.) @IC = −3 A QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No.