Datasheet4U Logo Datasheet4U.com

2SA1714 - PNP SILICON EPITAXIAL POWER TRANSISTOR

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • High DC current amplifiers due to darlington connection.
  • Large current capacitance and low VCE(sat).
  • TO-126 power transistor with high power dissipation.
  • Complementary transistor with 2SC4342.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA1710 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
2SA1715 (2SAxxxx) TRANSISTOR Micro Electronics
2SA1718 SILICON POWER TRANSISTOR SavantIC
2SA1718 POWER TRANSISTOR Inchange Semiconductor
2SA1700 PNP Transistor INCHANGE

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SA1742 PNP Silicon Transistor
2SA1743 PNP Silicon Transistor
2SA1744 PNP Transistor
2SA1006 PNP/NPN TRANSISTOR
2SA1006A PNP/NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET SILICON TRANSISTOR 2SA1714 PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse mortors or blushless mortor of OA and FA equipment. PACKAGE DRAWING (UNIT: mm) FEATURES • High DC current amplifiers due to darlington connection • Large current capacitance and low VCE(sat) • TO-126 power transistor with high power dissipation • Complementary transistor with 2SC4342 QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.