NEC 2SA1836
The 2SA1836 is PNP silicon epitaxial transistor. When mounted on ceramic substrate of 3.0 cm x 0.64 mm ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Collector Cut-off Current Emitter Cut-off Current DC Current Gain Note SYMBOL ICBO IEBO hFE1 hFE2 TEST CONDITIONS VCB = −60 V, IE = 0 VEB = −5.0 V, IC = 0 VCE = −6.0 V, IC = −0.1 mA VCE = −6.0 V, IC = −1.0 mA VCE = −6.0 V, IC = −1.0 mA IC = −100 mA, IB = −10 mA IC = −100 mA, IB = −10 mA VCE = −6.0 V, IE = 10 mA VCE = −6.0 V, IE = 0, f = 1.0 MHz MIN.| Part No. | 2SA1836 |
|---|---|
| Datasheet | 2SA1836 Download |
| Manufacturer |  NEC |
| Description | PNP SILICON EPITAXIAL TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
The 2SA1836 is PNP silicon epitaxial transistor. PACKAGE DRAWING (Unit: mm) 0.3 ± 0.05 0.1 +0.1 –0.05FEATURES
1.6 ± 0.1 0.8 ± 0.1● High DC current gain: hFE2 = 200 TYP.
● High voltage: VCEO = −50 V 3 0 to 0.1 2 0.2 +0.1 –0 0.5 0.5 1.0 1.6 ± 0.1 0.6 0.75 ± 0.05 1
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Note1 Note2 VCBO VCEO VEBO IC(DC) IC(pulse) PT Tj Tstg −60 −50 −5.0 −100 −200 200 150 –55 to + 150 V V V mA mA mW °C °C Total Power Dissipation (TA = 25°C) Junction Temperature Storage Temperature Range 1: Emitter 2: Base 3: Collector Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2 2. TYP. MAX. −100 −100 UNIT nA nA − 50 90 200 −0.62 −0.18 −0.86 50 180 4.5 6.0 −0.3 −1.0 600 − V V V MHz pF Base to Emitter Voltage Note Note VBE VCE(sat) VBE(sat) fT Cob Collector Saturation Voltage Base Saturation Voltage Gain Bandwidth Product Output Capacitance Note Note Pulsed:...
