2SA1836
DESCRIPTION
The 2SA1836 is PNP silicon epitaxial transistor.
PACKAGE DRAWING (Unit: mm)
0.3 ± 0.05 0.1 +0.1
- 0.05
FEATURES
1.6 ± 0.1 0.8 ± 0.1
- High DC current gain: h FE2 = 200 TYP.
- High voltage: VCEO =
- 50 V
3 0 to 0.1 2 0.2 +0.1
- 0 0.5 0.5 1.0 1.6 ± 0.1 0.6 0.75 ± 0.05 1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse)
Note1 Note2
VCBO VCEO VEBO IC(DC) IC(pulse) PT Tj Tstg
- 60
- 50
- 5.0
- 100
- 200 200 150
- 55 to + 150
V V V m A m A m W °C °C
Total Power Dissipation (TA = 25°C) Junction Temperature Storage Temperature Range
1: Emitter 2: Base 3: Collector
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2 2. When mounted on ceramic substrate of 3.0 cm x 0.64 mm
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS Collector Cut-off Current Emitter Cut-off Current DC Current Gain
Note
SYMBOL ICBO IEBO h FE1 h FE2
TEST CONDITIONS VCB =
- 60 V, IE = 0 VEB =
- 5.0 V, IC = 0...
