NEC 2SA1988
The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier.| Part No. | 2SA1988 |
|---|---|
| Datasheet | 2SA1988 Download |
| Manufacturer |  NEC |
| Description | PNP SILICON TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
PACKAGE DIMENSIONS 15.7 MAX.FEATURES
● High Voltage VCEO = −200 V● DC Current Gain hFE = 70 to 200
● TO-3P Package 1.0 φ 3.2±0.2 4.7 MAX. 1.5 20.5MAX. 5.0 4 4.5±0.2 1.0±0.2 0.6±0.1 5.45 1 19 MIN. 3.4MAX. 2 3 ORDERING INFORMATION Type Number 2SA1988 Package MP-88
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Total Power Dissipantion JunctionTemperature VCBO VCEO VEBO IC (DC) IC (pulse) *1 P2 *2 TJ −200 −200 −5.0 −7.0 -10 100 150 −55 to +150 *2 TC = 25 °C V V V A A W °C °C 2.2±0.2 5.45 2.8±0.1 MP-88 1.Base 2.Collector 3.Emitter 4.Fin (Collector) Storage Tempreature Tstg *1 PW ≤ 300 µs, Duty Cycle ≤ 10 %ELECTRICAL CHARACTERISTICS
(TA = 25 °C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Collector Saturation Voltage Base Saturation Voltage Gain Band width Product Output Capacitance SYMBOL ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) fT Cob 70 20 −0.6 −1.3 40 270 −2.0 −2.0 MIN.
