• Part: 2SB1432
  • Description: PNP SILICON EPITAXIAL TRANSISTOR
  • Category: Transistor
  • Manufacturer: NEC
  • Size: 103.38 KB
Download 2SB1432 Datasheet PDF
NEC
2SB1432
FEATURES - High h FE due to Darlington connection h FE ≥ 1,000 @VCE = - 2.0 V, IC = - 10 A) - Mold package that does not require an insulation board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg Conditions PW ≤ 300 µs, duty cycle ≤ 10% TC = 25°C TA = 25°C Ratings - 100 - 100 - 8.0 +- 10 +- 20 Unit V V V A A - 1.0 30 2.0 150 - 55 to +150 A W W °C °C ORDERING INFORMATION Part No. 2SB1432 Package Isolated TO-220 (Isolated TO-220) INTERNAL EQUIVALENT CIRCUIT 1. Base 2. Collector 3. Emitter The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with...