• Part: 2SB1453
  • Description: PNP SILICON EPITAXIAL POWER TRANSISTOR
  • Category: Transistor
  • Manufacturer: NEC
  • Size: 130.31 KB
Download 2SB1453 Datasheet PDF
NEC
2SB1453
FEATURES - High DC current amplifier ratio h FE ≥ 100 (VCE = - 5 V, IC = - 0.5 A) - Mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)- IB(DC) PT (Tc = 25°C) PT (Ta = 25°C) Tj Tstg Ratings - 60 - 60 - 7.0 - 3.0 - 6.0 - 1.0 25 2.0 150 - 55 to +150 Unit V V V A A A W W °C °C Electrode Connection 1. Base 2. Collector 3. Emitter - PW ≤ 10 ms, duty cycle ≤ 50% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No....