• Part: 2SB1658
  • Description: Silicon PNP Transistor
  • Category: Transistor
  • Manufacturer: NEC
  • Size: 47.36 KB
Download 2SB1658 Datasheet PDF
NEC
2SB1658
FEATURES - Low VCE(sat) VCE(sat) = - 0.15 V Max (@l C/l B = 1.0 A/50 m A) 3.8 ± 0.2 (0.149) PACKAGE DIMENSIONS in millimeters (inches) 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) φ 3.2 ± 0.2 ( φ 0.126) 12.0 MAX. (0.472 MAX.) - High DC Current Gain h EF = 150 to 600 (@VCE = - 2.0 V, l C = - 1.0 A) ABSOLUTE MAXIMUM RATINGS Maximum Voltage and Current (TA = 25 °C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse)- Base Current (DC) - PW ≤ 10ms, Duty Cycle ≤ 10 % Maximum Power Dissipation Total Power Dissipation (TC = 25 °C) Total Power Dissipation (TA = 25 °C) Maximum Temperature Junction Temperature Storage Temperature PT PT Tj Tstg 10 W 1.0 W 150 °C - 55 to 150 °C VCB0 VCE0 VEB0 IC(DC) IC(Pulse) IB(DC) - 30 V - 30 V - 6.0 V - 5.0 A - 10 A - 2.0 A 1 2 3 2.5 ± 0.2 (0.098) 13.0 MIN. (0.512 MIN.) 1.2 (0.047) 0.55+0.08 - 0.05 (0.021) 0.8 +0.08 - 0.05 (0.031) 2.3 2.3 (0.090) (0.090) 1.2 (0.047) 1. Emitter 2. Collector...