2SB963-Z - PNP Transistor

NEC (now Renesas Electronics)

General Description

The 2SB963-Z is designed for switching, especially in Hybrid Integrated Circuits.

Key Features

High Gain hFE = 2000 to 3000.
Complement to 2SD1286-Z.

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2SB963-Z pnp transistor by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	2SB963-Z
Manufacturer	NEC (now Renesas Electronics)
File Size	641.29 KB
Description	PNP Transistor
Datasheet	2SB963-Z Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON POWER TRANSISTOR 2SB963-Z PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) DESCRIPTION The 2SB963-Z is designed for switching, especially in Hybrid Integrated Circuits. FEATURES • High Gain hFE = 2000 to 3000 • Complement to 2SD1286-Z PACKAGE DRAWING (Unit: mm) 6.5 ±0.2 5.0 ±0.2 4.4 ±0.2 4 Note 1.5 +0.2 −0.1 2.3 ±0.2 0.5 ±0.1 Note 5.6 ±0.3 9.5 ±0.5 5.5 ±0.2 123 1.0 ±0.5 0.4 MIN. 0.5 TYP. 2.5 ±0.5 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base voltage Collector to Emitter voltage Emitter to Base voltage Collector Current (DC) Collector Current (pulse) Note 1 Total Power Dissipation Note 2 Junction Temperature Storage Temperature VCBO VCEO VEBO IC(DC) IC(pulse) PT (TA = 25°C) Tj Tstg −60 −60 −8 m1.0 m2.0 2.