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2SC1927 - NPN SILICON EPITAXIAL DUAL TRANSISTOR

General Description

The 2SC1927 is an NPN silicon epitaxial dual transistor that consists of two chips equivalent to the 2SC1275, and is designed for differential amplifier and ultra-high-speed switching applications.

5.0 MIN.

5.0 MIN.

Key Features

  • NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific.

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Full PDF Text Transcription (Reference)

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DATA SHEET SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION The 2SC1927 is an NPN silicon epitaxial dual transistor that consists of two chips equivalent to the 2SC1275, and is designed for differential amplifier and ultra-high-speed switching applications. 4 PACKAGE DIMENSIONS 5.0 MIN. 3.5 +0.3 –0.2 5.0 MIN. ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PC PT Tj Tstg RATINGS 30 14 3.0 50 200 300 200 –65 to +200 UNIT 2.0 MAX. 5 6 0.1 +0.06 –0.