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2SC2149 - MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

General Description

The 2SC2148, 2SC2149 are economical microwave transistors encapsulated into new hermetic stripline packages, "micro X".

These are designed for small signal amplifier, low noise amplifier, and oscillator applications in the L to C band, and CML circuit use.

4.0 MIN.

Key Features

  • 2SC2148 NF: 2.1 dB TYP. @f = 500 MHz 2SC2149 NF: 2.6 dB TYP. @f = 2.0 GHz 4.0 MIN. 2 4.0 MIN. 4 3 0.5±0.05 2.55±0.2 φ 2.1 1.8 MAX. 0.55 1. 2. 3. 4. Emitter Collector Emitter Base Derating curves of the 2SC2148, 2SC2149. The maximum junction temperature of these transistors is allowed up to 200 °C, but the ambient or storage temperature is limitted to 150 °C. The operating junction temperature is estimated with power consumption (PT) and thermal resistance mentioned on these derating curves.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SC2148 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON TRANSISTORS 2SC2148, 2SC2149 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors encapsulated into new hermetic stripline packages, "micro X". These are designed for small signal amplifier, low noise amplifier, and oscillator applications in the L to C band, and CML circuit use. 4.0 MIN. PACKAGE DIMENSIONS (Unit : mm) 1 0.5±0.05 0.1−0.03 +0.06 FEATURES 2SC2148 NF: 2.1 dB TYP. @f = 500 MHz 2SC2149 NF: 2.6 dB TYP. @f = 2.0 GHz 4.0 MIN. 2 4.0 MIN. 4 3 0.5±0.05 2.55±0.2 φ 2.1 1.8 MAX. 0.55 1. 2. 3. 4. Emitter Collector Emitter Base Derating curves of the 2SC2148, 2SC2149.