2SC2721 - NPN Silicon Transistor

NEC (now Renesas Electronics)

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

Complementary transistor with 2SA1154.
High PT in small dimension and high voltage PT = 1 W, VCEO = 60 V.

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2SC2721 npn silicon transistor by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	2SC2721
Manufacturer	NEC (now Renesas Electronics)
File Size	105.36 KB
Description	NPN Silicon Transistor
Datasheet	2SC2721 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON TRANSISTOR 2SC2721 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-FREQUENCY AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Complementary transistor with 2SA1154 • High PT in small dimension and high voltage PT = 1 W, VCEO = 60 V ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC(DC) IC(pulse)* PT Tj Tstg * PW ≤ 10 ms, duty cycle ≤ 50% Ratings 60 60 5.0 0.7 1.