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2SC3604 - NPN EPITAXIAL SILICON TRANSISTOR

Key Features

  • Low noise : NF = 1.6 dB TYP. @ f = 2.0 GHz.
  • High power gain : GA = 12 dB TYP. @ f = 2.0 GHz C 3.8 MIN. 3.8 MIN. B.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SC3603 NPN EPITAXIAL SILICON TRANSISTOR
2SC3615 NPN SILICON TRANSISTOR
2SC3616 NPN SILICON TRANSISTOR
2SC3617 NPN Transistor
2SC3618 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. PACKAGE DIMENSIONS (in mm) E 3.8 MIN. FEATURES • Low noise : NF = 1.6 dB TYP. @ f = 2.0 GHz • High power gain : GA = 12 dB TYP. @ f = 2.0 GHz C 3.8 MIN. 3.8 MIN. B PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT (TC = 25 °C) Tj Tstg RATING 20 10 1.