| Part number | 2SC3604 |
|---|---|
| Datasheet | 2SC3604_NEC.pdf |
| File Size | 94.47 KB |
| Manufacturer | NEC (now Renesas Electronics) |
| Description | NPN EPITAXIAL SILICON TRANSISTOR |
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DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. PACKAGE DIMENSIONS (in mm) E 3.8 MIN.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SC3604 | NPN EPITAXIAL SILICON TRANSISTOR | New Jersey Semi-Conductor |
See all NEC (now Renesas Electronics) datasheets
| Part Number | Description |
|---|---|
| 2SC3603 | NPN EPITAXIAL SILICON TRANSISTOR |
| 2SC3615 | NPN SILICON TRANSISTOR |
| 2SC3616 | NPN SILICON TRANSISTOR |
| 2SC3617 | NPN Transistor |
| 2SC3618 | NPN Transistor |
| 2SC3622 | NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC3622A | NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC3623 | NPN SILICON TRANSISTOR |
| 2SC3623A | NPN SILICON TRANSISTOR |
| 2SC3624 | NPN SILICON EPITAXIAL TRANSISTOR |
