2SC3604
2SC3604 is NPN EPITAXIAL SILICON TRANSISTOR manufactured by NEC.
DATA SHEET
SILICON TRANSISTOR
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.
PACKAGE DIMENSIONS (in mm)
3.8 MIN.
Features
- Low noise : NF = 1.6 dB TYP. @ f = 2.0 GHz
- High power gain : GA = 12 dB TYP. @ f = 2.0 GHz
3.8 MIN.
3.8 MIN. B
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
SYMBOL VCBO VCEO...
