2SC3663 Description
DATA SHEET SILICON TRANSISTOR 2SC3663 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION.
2SC3663 Key Features
- Low-voltage, low-current, low-noise and high-gain NF = 3.0 dB TYP. GA = 3.5 dB TYP. cordless phones, etc
- Gold electrode gives high reliability
- Mini mold package, ideal for hybrid ICs. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz @VCE = 1 V, IC = 250 PA, f = 1.0 GHz
- Ideal for battery drive of pagers, pact radio equipment