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2SC3663 - NPN EPITAXIAL SILICON TRANSISTOR

Key Features

  • Low-voltage, low-current, low-noise and high-gain NF = 3.0 dB TYP. GA = 3.5 dB TYP. cordless phones, etc.
  • Gold electrode gives high reliability.
  • Mini mold package, ideal for hybrid ICs. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz @VCE = 1 V, IC = 250 PA, f = 1.0 GHz.

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Full PDF Text Transcription (Reference)

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DATA SHEET SILICON TRANSISTOR 2SC3663 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURES • Low-voltage, low-current, low-noise and high-gain NF = 3.0 dB TYP. GA = 3.5 dB TYP. cordless phones, etc. • Gold electrode gives high reliability. • Mini mold package, ideal for hybrid ICs. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz @VCE = 1 V, IC = 250 PA, f = 1.0 GHz PACKAGE DIMENSIONS (in mm) 0.4 +0.1 –0.05 2.8 ± 0.2 1.5 0.65–0.15 +0.1 • Ideal for battery drive of pagers, compact radio equipment, 0.95 0.95 2.9 ± 0.