NEC 2SC4094
The 2SC4094 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. This achieved by direct nitride 2.9±0.2 (1.8) 0.85 0.95 PACKAGE DIMENSIONS (Units: mm) 0.4 −0.05 0.4 −0.05 0.4 −0.05 0.16 −0.06 +0.1 2.8 −0.3 +0.2 1.5 −0.1 2 3 4 5° 0 to 0.1 5° +0.2 +0.1 +0.1 passivated base surface process (DNP process) which is an NEC +0.1 FEATURES • NF = 1.2 dB TYP.| Part No. | 2SC4094 |
|---|---|
| Datasheet | 2SC4094 Download |
| Manufacturer |  NEC |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. proprietary new fabrication technique. @f = 1.0 GHz, VCE = 8 V, IC = 7 mA● S21e 2 = 15 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 20 mA 0.6 −0.05 +0.1 Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 20 10 1.5 65 200 150 V V V mA mW 1.1−0.1 0.8
ABSOLUTE MAXIMUM RATINGS
(TA = 25 C) +0.2 65 to +150 C C PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. EmitterELECTRICAL CHARACTERISTICS
(TA = 25 C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Maximum Available Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre 50 9 0.25 2 MIN. TYP. MAX. 1.0 1.0 250 UNIT TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 8V, IC = 20 mA A A GHz...
