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2SC4187 - NPN SILICON EPITAXIAL TRANSISTOR

Datasheet Summary

Description

The 2SC4187 is designed primarily for use in low voltage and low current application up to UHF band.

The 2SC4187 is ideal for pagers, electro-optic detector postamplifier applications, and other battery powered systems.

Features

  • 2 0.3 +0.1.
  • 0 0.15 +0.1.
  • 0.05 1 3 Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 15 8 2 5 50 150.
  • 65 to +150 V V V mA mW ˚ C ˚ C 0.9 ±0.1 0.3.

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Datasheet Details

Part number 2SC4187
Manufacturer NEC
File Size 43.24 KB
Description NPN SILICON EPITAXIAL TRANSISTOR
Datasheet download datasheet 2SC4187 Datasheet
Additional preview pages of the 2SC4187 datasheet.

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Full PDF Text Transcription

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DATA SHEET SILICON TRANSISTOR 2SC4187 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4187 is designed primarily for use in low voltage and low current application up to UHF band. The 2SC4187 is ideal for pagers, electro-optic detector postamplifier applications, and other battery powered systems. Super mini mold package makes it suitable for use in small type equipments such as HICs. PACKAGE DIMENSIONS in millimeters 2.1 ±0.1 1.25 ±0.1 • Low Noise : NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 µA, f = 1.0 GHz • High Gain : |S21e|2 = 6.5 dB TYP. @VCE = 1 V, IC = 1 mA, f = 1.0 GHz • Small Package 0.65 0.65 2.0 ±0.2 0.3 +0.1 –0 FEATURES 2 0.3 +0.1 –0 0.15 +0.1 –0.
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