Datasheet4U Logo Datasheet4U.com

2SC4332 - NPN SILICON EPITAXIAL TRANSISTOR

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • a very low www. DataSheet4U. com collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC4332 Silicon NPN Power Transistor Inchange Semiconductor
2SC4332-Z Silicon NPN Power Transistor Inchange Semiconductor
2SC4332-Z NPN SILICON EPITAXIAL TRANSISTOR Kexin
2SC4330 Silicon NPN Power Transistor Inchange Semiconductor
2SC4331 Silicon NPN Power Transistor Inchange Semiconductor

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SC4332-Z NPN SILICON EPITAXIAL TRANSISTOR
2SC4331 Silicon Power Transistor
2SC4331-Z Silicon Power Transistor
2SC4336 NPN Transistor
2SC4342 NPN SILICON EPITAXIAL TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET SILICON POWER TRANSISTORS 2SC4332, 2SC4332-Z NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4332 and 2SC4332-Z are mold power transistors developed for high-speed switching and features a very low www.DataSheet4U.com collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching. PACKAGE DRAWING (Unit: mm) FEATURES • Low collector saturation voltage VCE(sat) = 0.3 V MAX. (IC = 3 A / IB = 0.15 A) • Fast switching speed: tf ≤ 0.3 µs MAX.