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2SC4553 Datasheet PDF

NEC 2SC4553

The 2SC4553 is a power transistor designed especially for low PACKAGE DRAWING (UNIT: mm) collector saturation voltage and features large current switching at a low power dissipation.
Part No. 2SC4553
Datasheet 2SC4553 Download
Manufacturer
NEC
Description NPN Silicon Transistor
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2SC4553 datasheet page 1 preview

FEATURES

● High hFE and low VCE(sat): hFE ≅ 800 (VCE = 2 V, IC = 3 A) VCE(sat) ≅ 0.12 V (IC = 3 A, IB = 0.03 A)
● On-chip C to E damper diode
● Mold package that does not require an insulating board or insulation bushing

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Tc = 25°C) PT (Ta = 25°C) Tj Tstg Ratings 100 100 7.0 ±7.5 ±10 2.0 30 2.0 150 −55 to +150 Unit V V V A A A W W °C °C (OHFWURGH &RQQHFWLRQ %DVH &ROOHFWRU (PLWWHU (48,9$/(17 &,5&8,7 * PW ≤ 10 ms, duty cycle ≤ 50% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
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