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2SC4813 Datasheet PDF

NEC 2SC4813

The 2SC4813 is a power transistor developed for high-speed switching and features high hFE and low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators.
Part No. 2SC4813
Datasheet 2SC4813 Download
Manufacturer
NEC
Description NPN SILICON EPITAXIAL TRANSISTOR
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2SC4813 datasheet page 1 preview

FEATURES

● Low VCE(sat): VCE(sat) ≤ 0.3 V
● High hFE:
● On-chip dumper-diode
● Auto-mounting possible in radial taping specifications @IC = 3.0 A, IB = 30 mA hFE = 450 to 2,000 @VCE = 2.0 V, IC = 3.0 A

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg Ta = 25°C PW ≤ 10 ms, duty cycle ≤ 2% Conditions Ratings 100 100 7.0 ±7.5 ±10 2.0 1.8 150 −55 to +150 Unit V V V A A A W °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15603EJ2V0DS00 (2nd edition) Date Published April 2002 N C...
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