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2SC5010 - NPN TRANSISTOR

General Description

The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band.

Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.

Key Features

  • Low Voltage Use.
  • High fT.
  • Low Cre.
  • Low NF : 12.0 GHz TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz) : 0.4 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) : 1.5 dB TYP. (@ VCE = 3 V, IC = 3 mA, f = 2 GHz) 2 1.6 ± 0.1 1.0 0.2 +0.1.
  • 0 0.5 0.3 +0.1.
  • 0 0.15 +0.1.
  • 0.05.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an NEC proprietary fabrication technique. FEATURES • Low Voltage Use. • High fT • Low Cre • Low NF : 12.0 GHz TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz) : 0.4 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) : 1.5 dB TYP. (@ VCE = 3 V, IC = 3 mA, f = 2 GHz) 2 1.6 ± 0.1 1.0 0.2 +0.1 –0 0.5 0.3 +0.1 –0 0.15 +0.1 –0.