NEC 2SC5010
The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an NEC proprietary fabrication technique.| Part No. | 2SC5010 |
|---|---|
| Datasheet | 2SC5010 Download |
| Manufacturer |  NEC |
| Description | NPN TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.FEATURES
● Low Voltage Use.● High fT
● Low Cre
● Low NF : 12.0 GHz TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz) : 0.4 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) : 1.5 dB TYP. (@ VCE = 3 V, IC = 3 mA, f = 2 GHz) 2 1.6 ± 0.1 1.0 0.2 +0.1 –0 0.5 0.3 +0.1 –0 0.15 +0.1 –0.05 PACKAGE DIMENSIONS in milimeters 1.6 ± 0.1 0.8 ± 0.1
● High |S21e|2 : 8.5 dB TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz)
● Ultra Super Mini Mold Package. 0.5 ORDERING INFORMATION PART NUMBER 2SC5010 2SC5010-T1 3 1 QUANTITY 50 pcs/Unit. 3 kpcs/Reel. PACKING STYLE Embossed tape 8 mm wide. Pin3(Collector) face to perforation side of the tape. 0.75 ± 0.05 0.6 * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs.
ABSOLUTE MAXIMUM RATINGS
(TA = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 9 6 2 30 125 150 –65 to +150 V V V mA mW ˚C ˚C 1.
