2SC5010 Description
The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an NEC proprietary fabrication technique.
2SC5010 Key Features
- Low Voltage Use
- High fT
- Low Cre
- High |S21e|2 : 8.5 dB TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz)
- Ultra Super Mini Mold Package
- Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs