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2SC5181 - NPN TRANSISTOR

Datasheet Summary

Features

  • Low current consumption and high gain |S21e|2 = 10.5 dBTYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 9.0 dBTYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz.
  • Ultra Super Mini-Mold package.

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Datasheet preview – 2SC5181

Datasheet Details

Part number 2SC5181
Manufacturer NEC
File Size 50.86 KB
Description NPN TRANSISTOR
Datasheet download datasheet 2SC5181 Datasheet
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Full PDF Text Transcription

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DATA SHEET SILICON TRANSISTOR 2SC5181 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain |S21e|2 = 10.5 dBTYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 9.0 dBTYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • Ultra Super Mini-Mold package PACKAGE DIMENSIONS (Units: mm) 1.6 ± 0.1 0.8 ± 0.1 2 1.6 ± 0.1 0.2 +0.1 –0 0.5 0.3 +0.1 –0 0.15 +0.1 –0.05 ORDERING INFORMATION PART NUMBER 2SC5181 2SC5181-T1 QUANTITY 50 units/box 3 000 units/reel ARRANGEMENT Embossed tape, 8 mm wide, pin No. 3 (collector) facing the perforation 1.0 84 0.5 3 1 * Contact your NEC sales representatives to order samples for evaluation (available in batches of 50). 0.75 ± 0.05 0.
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