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2SC5194-T2 - NPN TRANSISTOR

Datasheet Summary

Features

  • Low Voltage Operation, Low Phase Distortion.
  • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz.
  • Large Absolute Maximum Collector Current.
  • 4-Pin Compact Mini Mold Package.

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Datasheet Details

Part number 2SC5194-T2
Manufacturer NEC
File Size 65.23 KB
Description NPN TRANSISTOR
Datasheet download datasheet 2SC5194-T2 Datasheet
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Full PDF Text Transcription

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DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz • Large Absolute Maximum Collector Current • 4-Pin Compact Mini Mold Package PACKAGE DRAWINGS (Unit: mm) 2.1±0.2 0.3 –0.05 +0.1 NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz IC = 100 mA 2.0±0.2 1.25±0.1 (1.25) 0.60 0.65 +0.1 ORDERING INFORMATION PART NUMBER 2SC5194-T1 QUANTITY 3 Kpcs/Reel PACKING STYLE Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape. Embossed tape 8 mm wide. Pin 1 (Collector), Pin 2 (Emitter) face to perforation side of the tape. 0.4 –0.05 0.9±0.1 0.
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