• Part: 2SC5843
  • Description: NPN SiGe RF TRANSISTOR
  • Category: Transistor
  • Manufacturer: NEC
  • Size: 50.54 KB
Download 2SC5843 Datasheet PDF
NEC
2SC5843
FEATURES - Ideal for low noise, high-gain amplification NF = 0.9 d B TYP. @ VCE = 2 V, IC = 5 m A, f = 2 GHz - Maximum stable power gain: MSG = 20.0 d B TYP. @ VCE = 2 V, IC = 20 m A, f = 2 GHz - Si Ge technology (f T = 60 GHz, fmax = 60 GHz) - 6-pin lead-less minimold (M16, 1208 package) ORDERING INFORMATION Part Number 2SC5843 2SC5843-T3 Quantity 50 pcs (Non reel) 10 kpcs/reel Supplying Form - 8 mm wide embossed taping - Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC P Note tot Tj Tstg Ratings 8.0 2.3 1.2 35 80 150 - 65 to +150 Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB Unit V V V m A m W °C °C Caution...