NEC 2SC5843
NPN SiGe RF TRANSISTOR
FEATURES
● Ideal for low noise, high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz● Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz
● SiGe technology (fT = 60 GHz, fmax = 60 GHz)
● 6-pin lead-less minimold (M16, 1208 package) ORDERING INFORMATION Part Number 2SC5843 2SC5843-T3 Quantity 50 pcs (Non reel) 10 kpcs/reel Supplying Form
● 8 mm wide embossed taping
● Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS
(TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC P Note tot Tj Tstg Ratings 8.0 2.3 1.2 35 80 150 −65 to +150 Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB Unit V V V mA mW °C °C Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.