2SD1695 Datasheet | NEC

FEATURES - On-chip protection elements enable time and cost reduction. C to E: Dumper diode C to B: Constant diode - Low collector saturation voltage QUALITY GRADES - Standard Data Shee . Electrode Connection 1. Emitter 2. Collector 3. Base 4. Collector (fin) Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its remended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)- IB(DC) PT (Ta = 25°C) PT (Tc = 25°C) Tj Tstg Ratings 31 ±4 31 ±4 8.0 ±2.0 ±3.0 0.2 1.3 10 150 - 55 to +150 Unit V V V A A A W W °C °C - PW ≤ 10 ms, duty cycle ≤ 50% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. . Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Data Sheet 4 U . Document No. D16138EJ1V0DS00 Date Published April 2002 N CP(K) Printed in Japan . © 2002 1998 .. (/(&75,&$/ &+$5$&7(5,67,&6 7D Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current DC current gain DC current gain Collector saturation voltage Base saturation voltage Turn-on time Storage time Fall time Symbol VCBO VCEO ICBO h FE1- h FE2- VCE(sat)- VBE(sat)- ton tstg tf °& Conditions MIN. 27 27 TYP. 31 31 MAX. 35 35 10 1,000 2,000 0.9 1.6 0.5 3.0 1.0 30,000 1.2 2.0 V V Unit V V IC = 1.0 m A, IE = 0 IC = 10 m A, RBE = ∞ VCB = 20 V, IE = 0 VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 1.0 A IC = 1.0 A, IB = 1.0 m A IC = 1.0 A, IB = 1.0 m A IC = 1.0 A, IB1 = - IB2 = 5.0 m A RL = 20 Ω, VCC ≅...