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2SD2217 Datasheet PDF

NEC 2SD2217

The 2SD2217 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC out to drivers such as pulse motor drivers and relay drivers in OA and FA equipment.
Part No. 2SD2217
Datasheet 2SD2217 Download
Manufacturer
NEC
Description NPN SILICON EPITAXIAL TRANSISTOR
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2SD2217 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 7 V Collector current IC(DC) 300 mA Collector current IC(pulse)* 600 mA Base current IB(DC) 30 mA Total power dissipation PT (Tc = 25°C) 25 W Total power dissipation PT (Ta = 25°C) 2.0 W Junction temperature Storage temperature Tj 150 °C Tstg −55 to +150 °C * PW ≤ 10 ms, duty cycle ≤ 50% PACKAGE DRAWING (UNIT: mm) Electrode Connection 1. Base (B) 2. Collector (C) 3. Emitter (E) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16140EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) © Printed in Japan 21090928 (/(&75,&$/ &+$5$&7(5,67,&6 7D °& 3DUDPHWHU 6\PERO &RQGLWL...
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