2SD2217
DATA SHEET
DARLINGTON POWER TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD2217 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC out to drivers such as pulse motor drivers and relay drivers in OA and FA equipment.
QUALITY GRADES
- Standard
Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its remended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current
IC(DC)
300 m A
Collector current
IC(pulse)-
600 m A
Base current
IB(DC)
30 m A
Total power dissipation
PT (Tc = 25°C)
Total...
