2SD596A - NPN Silicon Transistor

NEC (now Renesas Electronics)

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

Complementary to NEC 2SB624 PNP Transistor.
High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA).

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2SD596A npn silicon transistor by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	2SD596A
Manufacturer	NEC (now Renesas Electronics)
File Size	556.80 KB
Description	NPN Silicon Transistor
Datasheet	2SD596A Datasheet

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2SD596	NPN Silicon Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON TRANSISTOR 2SD596A www.DataSheet4U.com AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to NEC 2SB624 PNP Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA) PACKAGE DRAWING (Unit: mm) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Total Power Dissipation Junction Temperature Storage Temperature Range VCBO 30 V VCEO 25 V VEBO 5.