2SD596A
FEATURES
- plementary to NEC 2SB624 PNP Transistor.
- High DC Current Gain: h FE = 200 TYP. (VCE = 1.0 V, IC = 100 m A)
PACKAGE DRAWING (Unit: mm)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Total Power Dissipation Junction Temperature Storage Temperature Range VCBO 30 V VCEO 25 V VEBO 5.0 V IC 700 m A PT 200 m W Tj 150 °C Tstg
- 55 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector Saturation Voltage Base to Emitter Voltage Gain Bandwidth Product Output Capacitance SYMBOL ICBO IEBO h FE1 h FE2 VCE(sat) VBE f T Cob 600 110 50 0.22 640 170 12 0.6 700 V m V MHz p F 200 MIN. TYP. MAX. 100 100 400 UNIT n A n A VCB = 30 V, IE = 0 A VEB = 5.0 V, IC = 0 A VCE = 1.0 V, IC = 100 m A VCE = 1.0 V, IC = 700 m A IC = 700 m A, IB = 70 m A VCE = 6.0 V, IC = 10 m A VCE = 6.0 V, IE =
- 10 m A
1. Emitter 2. Base 3. Collector TEST...
