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2SJ204 - P-Channel MOSFET

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • Directly driven by ICs having a 5 V power supply.
  • Has low on-state resistance RDS(on) = 13 Ω MAX. (VGS =.
  • 4.0 V, ID =.
  • 10 mA) RDS(on) = 8 Ω MAX. (VGS =.
  • 10 V, ID =.
  • 10 mA).
  • Complementary to 2SK1582.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SJ202 P-Channel MOSFET
2SJ203 MOS FIELD EFFECT TRANSISTOR
2SJ205 P-Channel MOSFET
2SJ206 P-Channel MOSFET
2SJ207 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ204 P-CHANNEL MOSFET FOR SWITCHING The 2SJ204, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The 2SJ204 has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators such as motors, relays, and solenoids. FEATURES • Directly driven by ICs having a 5 V power supply. • Has low on-state resistance RDS(on) = 13 Ω MAX. (VGS = −4.0 V, ID = −10 mA) RDS(on) = 8 Ω MAX. (VGS = −10 V, ID = −10 mA) • Complementary to 2SK1582 ORDERING INFORMATION PART NUMBER 2SJ204 Marking: H15 PACKAGE SC-59 (Mini Mold) 1.1 to 1.4 0.3 2.9 ±0.2 0.95 0.95 0 to 0.1 PACKAGE DRAWING (Unit: mm) +0.1 –0.05 2.8 ±0.2 1.5 0.65 +0.1 –0.15 0.