2SJ208 Datasheet P-channel MOSFET

Manufacturer: NEC (now Renesas Electronics)

Overview: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ208 P-CHANNEL MOS FET FOR.

Datasheet Details

Part number	2SJ208
Manufacturer	NEC (now Renesas Electronics)
File Size	275.56 KB
Description	P-Channel MOSFET
Datasheet	2SJ208_NEC.pdf

General Description

The 2SJ208, P-channel vertical type MOS FET, is a switching device which can be driven by 2.5 V power supply.

As the MOS FET is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR cameras and headphone stereos which need power saving.

Key Features

Directly driven by ICs having a 3 V power supply.
Not necessary to consider driving current because of its high input impedance.
Possible to reduce the number of parts by omitting the bias resistor.
Has low on-state resistance RDS(on) = 3.0 Ω MAX. VGS = －2.5 V, ID = －30 mA RDS(on) = 1.0 Ω MAX. VGS = －4.0 V, ID = －1.0 A.

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Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	2SJ208	P-Channel MOSFET	Kexin

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