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2SJ210 - P-Channel MOSFET

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • Directly driven by the output of ICs having a 5 V power source.
  • Not necessary to consider driving current because of its high input impedance.
  • Possible to reduce the number of parts by omitting the bias resistor. 2.9 ±0.2 0.95 0.95.

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📁 Similar Datasheet

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SJ211 P-Channel MOSFET
2SJ212 P-Channel MOSFET
2SJ213 P-Channel MOSFET
2SJ202 P-Channel MOSFET
2SJ203 MOS FIELD EFFECT TRANSISTOR

Full PDF Text Transcription (Reference)

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ210 P-CHANNEL MOSFET FOR SWITCHING The 2SJ210, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The 2SJ210 has excellent switching characteristics and is suitable as a high-speed switching device in digital circuits. FEATURES • Directly driven by the output of ICs having a 5 V power source. • Not necessary to consider driving current because of its high input impedance. • Possible to reduce the number of parts by omitting the bias resistor. 2.9 ±0.2 0.95 0.95 PACKAGE DRAWING (Unit: mm) +0.1 –0.05 2.8 ±0.2 1.5 0.65 +0.1 –0.15 0.4 +0.1 –0.05 2 3 1 Marking 0.4 +0.1 –0.06 1.1 to 1.4 0.3 0.