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2SJ211 - P-Channel MOSFET

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • Directly driven by ICs having a 5 V power supply.
  • Not necessary to consider driving current because of its high input impedance.
  • Possible to reduce the number of parts by omitting the bias resistor.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SJ210 P-Channel MOSFET
2SJ212 P-Channel MOSFET
2SJ213 P-Channel MOSFET
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2SJ203 MOS FIELD EFFECT TRANSISTOR

Full PDF Text Transcription (Reference)

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ211 P-CHANNEL MOSFET FOR SWITCHING The 2SJ211, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The 2SJ211 has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators such as motors, relays, and solenoids. FEATURES • Directly driven by ICs having a 5 V power supply. • Not necessary to consider driving current because of its high input impedance. • Possible to reduce the number of parts by omitting the bias resistor. ORDERING INFORMATION PART NUMBER 2SJ211 Marking: H18 PACKAGE SC-59 (Mini Mold) 1.1 to 1.4 0.3 2.9 ±0.2 0.95 0.95 0 to 0.1 PACKAGE DRAWING (Unit: mm) +0.1 –0.05 2.8 ±0.2 1.5 0.65 +0.1 –0.15 0.