NEC 2SJ211
The 2SJ211, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The 2SJ211 has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators such as motors, relays, and solenoids.| Part No. | 2SJ211 |
|---|---|
| Datasheet | 2SJ211 Download |
| Manufacturer |  NEC |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Directly driven by ICs having a 5 V power supply.● Not necessary to consider driving current because of its high input impedance.
● Possible to reduce the number of parts by omitting the bias resistor. <R> ORDERING INFORMATION PART NUMBER 2SJ211 Marking: H18 PACKAGE SC-59 (Mini Mold) 1.1 to 1.4 0.3 2.9 ±0.2 0.95 0.95 0 to 0.1 PACKAGE DRAWING (Unit: mm) +0.1 –0.05 2.8 ±0.2 1.5 0.65 +0.1 –0.15 0.4 +0.1 –0.05 2 3 1 Marking 0.4 +0.1 –0.06 0.16 1. Source 2. Gate 3. Drain
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −100 Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note Total Power Dissipation VGSS ID(DC) ID(pulse) PT m20 m200 m400 200 Channel Temperature Tch 150 Storage Temperature Tstg −55 to +150 V V mA mA mW °C °C Note PW ≤ 10 ms, Duty Cycle ≤ 50% EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source <R> Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
