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2SJ243 - P-Channel MOSFET

Key Features

  • Small mounting area: about 60 % of the conventional mini-mold package (SC-70).
  • Can be directly driven by 3-V IC.
  • Can be automatically mounted 0.5 1.0 1.6 ± 0.1 0.6 0.75 ± 0.05.

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📁 Similar Datasheet

Part Number Description Manufacturer
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2SJ244 P-Channel MOSFET Renesas
2SJ244 P-Channel MOSFET Kexin
2SJ245 Silicon P-Channel MOS FET Hitachi Semiconductor

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SJ202 P-Channel MOSFET
2SJ203 MOS FIELD EFFECT TRANSISTOR
2SJ204 P-Channel MOSFET
2SJ205 P-Channel MOSFET
2SJ206 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ243 P-CHANNEL MOS FET FOR SWITCHING The 2SJ243 is a P-channel vertical type MOS FET that is driven at 2.5 V. Because this MOS FET can be driven on a low voltage and because it is not necessary to consider the drive current, the 2SJ243 is ideal for driving the actuator of power-saving systems, 1.6 ± 0.1 PACKAGE DIMENSIONS (in mm) 0.3 ± 0.05 0.1 +0.1 –0.05 Moreover, the 2SJ243 is housed in a super small mini-mold package so that it can help increase the mounting density on the printed circuit board and lower the mounting cost, contributing to miniaturization of the application systems. 0.8 ± 0.1 such as VCR cameras and headphone stereo systems. D 0 to 0.1 G 0.2 0.5 +0.