NEC 2SJ243
The 2SJ243 is a P-channel vertical type MOS FET that is driven at 2.5 V. The protection diode is to protect the product from damage due to static electricity. Because this MOS FET can be driven on a low voltage and because it is not necessary to consider the drive current, the 2SJ243 is ideal for driving the actuator of power-saving systems, 1.6 ± 0.1 PACKAGE DIMENSIONS (in mm) 0.3 ± 0.05 0.1 +0.1 –0.05 Moreover, the 2SJ243 is housed in a super small...| Part No. | 2SJ243 |
|---|---|
| Datasheet | 2SJ243 Download |
| Manufacturer |  NEC |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Small mounting area: about 60 % of the conventional mini-mold package (SC-70)● Can be directly driven by 3-V IC
● Can be automatically mounted 0.5 1.0 1.6 ± 0.1 0.6 0.75 ± 0.05 EQUIVALENT CIRCUIT Drain (D) The internal diode in the right figure is a parasitic diode. If there is a danger that an extremely high voltage will be applied across the gate and source in the actual circuit, a gate protection circuit such as an external constant-voltage diode is necessary. Gate (G) Gate protection diode Source (S) Internal diode PIN CONNECTIONS S: Source D: Drain G: Gate Marking: A1
ABSOLUTE MAXIMUM RATINGS
(TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) SYMBOL VDSS VGSS ID(DC) ID(pulse) PW ≤ 10 ms Duty cycle ≤ 50 % 3.0 cm2 × 0.64 mm, ceramic substrate used VGS = 0 VDS = 0 TEST CONDITIONS RATING –30 ±7 ± 100 ± 200 UNIT V A mA mA Total Power Dissipation Channel Temperature Operating Temperature Storage Temperature PT Tch Topt Tstg 200 150 –55 to +80 –55 to +150 mW ˚C ˚C ˚C Document No.
