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2SJ355 Datasheet P-channel MOSFET

Manufacturer: NEC (now Renesas Electronics)

Overview: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ355 P-CHANNEL MOS FET FOR HIGH SWITCHING The 2SJ355 is a P-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters. PACKAGE DIMENSIONS (in mm) 4.5 ±0.1 1.6 ±0.2 1.5 ±0.

Key Features

  • Can be directly driven by 5-V IC.
  • Low ON resistance RDS(on) = 0.60 Ω MAX. @VGS =.
  • 4 V, ID =.
  • 1.0 A RDS(on) = 0.35 Ω MAX. @VGS =.
  • 10 V, ID =.
  • 1.0 A 0.8 MIN. S 0.42 ±0.06 1.5 D G 0.47 ±0.06 3.0 0.42 ±0.06 4.0 ±0.25 0.41 +0.03.
  • 0.05.

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