2SJ687 - MOS FIELD EFFECT TRANSISTOR

NEC (now Renesas Electronics)

General Description

The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage.

Key Features

Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS =.
4.5 V, ID =.
10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS =.
3.0 V, ID =.
10 A) RDS(on)3 = 20 mΩ MAX. (VGS =.
2.5 V, ID =.
10 A).
2.5 V drive available.
Avalanche capability ratings.

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2SJ687 mos field effect transistor by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	2SJ687
Manufacturer	NEC (now Renesas Electronics)
File Size	196.75 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	2SJ687 Datasheet

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Other Datasheets by NEC (now Renesas Electronics)

Part Number	Description
2SJ600	P-Channel Power MOSFET
2SJ601	P-Channel Power MOSFET
2SJ602	MOS FIELD EFFECT TRANSISTOR
2SJ603	MOS FIELD EFFECT TRANSISTOR
2SJ604	P-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ687 SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A) RDS(on)3 = 20 mΩ MAX. (VGS = −2.5 V, ID = −10 A) • 2.5 V drive available • Avalanche capability ratings ORDERING INFORMATION PART NUMBER 2SJ687-ZK-E1-AY 2SJ687-ZK-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel PACKAGE TO-252 (MP-3ZK) 0.27 g TYP. Note Pb-free (This product does not contain Pb in external electrode.