2SJ687
DESCRIPTION
The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage.
FEATURES
- Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS =
- 4.5 V, ID =
- 10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS =
- 3.0 V, ID =
- 10 A) RDS(on)3 = 20 mΩ MAX. (VGS =
- 2.5 V, ID =
- 10 A)
- 2.5 V drive available
- Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER 2SJ687-ZK-E1-AY 2SJ687-ZK-E2-AY
Note Note
LEAD PLATING Pure Sn (Tin)
PACKING Tape 2500 p/reel
PACKAGE TO-252 (MP-3ZK) 0.27 g TYP.
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
(TO-252)
- 20 m12 m20 m60 36 1.0 150
- 55 to +150
- 20 40 V V A A W W °C °C A m J
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage...
