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2SK1658 - N-Channel MOSFET

General Description

The 2SK1658 is an N -channel vertical type MOS FET which can be driven by 2.5 V power supply.

As the MOS FET is low Gate Leakage Current, it is suitable for appliances including Filter Circuit.

0 0.65 0.65 2.1 ±0.1 1.25 ±0.1 PACKAGE DRAWING (Unit : mm)

Key Features

  • Directly driven by ICs having a 3 V power supply.
  • Has low Gate Leakage Current IGSS = ±5 nA MAX. (VGS = ±3.0 V) G 0.9 ±0.1 Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note VDSS VGSS ID(DC) ID(pulse) PT Tch Topt Tstg 30 ±7 ±100 ±200 150 150.
  • 55 to +80.
  • 55 to +150 V V mA mA mW °C °C °C Total Power Dissipation (TA = 25°C) Channel Temperature Operating Temperature Storage Temper.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1658 N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SK1658 is an N -channel vertical type MOS FET which can be driven by 2.5 V power supply. As the MOS FET is low Gate Leakage Current, it is suitable for appliances including Filter Circuit. 2.0 ±0.2 0.3 +0.1 –0 0.65 0.65 2.1 ±0.1 1.25 ±0.1 PACKAGE DRAWING (Unit : mm) FEATURES • Directly driven by ICs having a 3 V power supply. • Has low Gate Leakage Current IGSS = ±5 nA MAX. (VGS = ±3.0 V) G 0.9 ±0.