Datasheet4U Logo Datasheet4U.com

2SK2368 - N-Channel MOSFET

Description

The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

15.7 MAX.

4 3.2±0.2 4.7 MAX.

Features

  • 2SK2368: RDS (on) = 0.6 Ω (VGS = 10 V, ID = 8.0 A).

📥 Download Datasheet

Datasheet preview – 2SK2368

Datasheet Details

Part number 2SK2368
Manufacturer NEC
File Size 100.23 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK2368 Datasheet
Additional preview pages of the 2SK2368 datasheet.

📁 Similar Datasheet

  • 2SK2311 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK2312 - N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK2313 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK2313 - N-Channel MOSFET (INCHANGE)
  • 2SK2314 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK2315 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
  • 2SK2315 - Silicon N-Channel MOSFET (Renesas)
  • 2SK2316 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
  • 2SK2317 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
  • 2SK2318 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
Other Datasheets by NEC

Full PDF Text Transcription

Click to expand full text
DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2367/2SK2368 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) 1.0 15.7 MAX. 4 3.2±0.2 4.7 MAX. 1.5 FEATURES 2SK2368: RDS (on) = 0.6 Ω (VGS = 10 V, ID = 8.0 A) ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage (2SK2367/2SK2368) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID (DC) ID (pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 ± 30 ± 15 ± 60 120 3.
Published: |